H1609 Datasheet, Equivalent, Cross Reference Search
Type Designator: H1609
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140(TYP) MHz
Collector Capacitance (Cc): 3.8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126ML
H1609 Transistor Equivalent Substitute - Cross-Reference Search
H1609 Datasheet (PDF)
..1. Size:110K shantou-huashan
h1609.pdf
h1609.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1609 APPLICATIONS . Audio Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126ML TstgStorage Temperature -45~150TjJunction Temperature 150PCCollector DissipationTA=25
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
