All Transistors. HB834 Datasheet

 

HB834 Datasheet and Replacement


   Type Designator: HB834
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9(TYP) MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220
 

 HB834 Substitution

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HB834 Datasheet (PDF)

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HB834

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HB834 APPLICATIONS Low Frequency Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

Datasheet: H6718V , H772 , H882 , HA1011 , HA1837 , HA940 , HB123D , HB1274 , 2N2222 , HB857 , HBD195 , HBD196 , HBD241C , HBD435 , HBD436 , HBD681 , HBD682 .

History: 2SB107A | 2SC4463 | 2SB1116A | HA94 | RN1204 | 2SD2182 | 2N5796

Keywords - HB834 transistor datasheet

 HB834 cross reference
 HB834 equivalent finder
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 HB834 substitution
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