HB834 Specs and Replacement
Type Designator: HB834
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 9 typ MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO220
HB834 Substitution
- BJT ⓘ Cross-Reference Search
HB834 datasheet
Detailed specifications: H6718V, H772, H882, HA1011, HA1837, HA940, HB123D, HB1274, C1815, HB857, HBD195, HBD196, HBD241C, HBD435, HBD436, HBD681, HBD682
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