All Transistors. HBD682 Datasheet

 

HBD682 Datasheet and Replacement


   Type Designator: HBD682
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126F
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HBD682 Datasheet (PDF)

 ..1. Size:141K  shantou-huashan
 hbd682.pdf pdf_icon

HBD682

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD682 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.1. Size:141K  shantou-huashan
 hbd681.pdf pdf_icon

HBD682

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD681 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: EMG1 | KSC5021O | BFP420W | BF370 | SLA4071 | PN708 | 2SD1394

Keywords - HBD682 transistor datasheet

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