HBD682 PDF and Equivalents Search

HBD682 Specs and Replacement

Type Designator: HBD682

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126F

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HBD682 datasheet

Detailed specifications: HB834 , HB857 , HBD195 , HBD196 , HBD241C , HBD435 , HBD436 , HBD681 , 2SA1943 , HBDW93C , HBDW94C , HBU3150A , HBU406 , HBU406H , HC1061 , HC2073 , HC2344 .

History: 2SA1303Y

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