2N710 Specs and Replacement
Type Designator: 2N710
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 7 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
2N710 Substitution
- BJT ⓘ Cross-Reference Search
2N710 datasheet
2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf 
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Detailed specifications: 2N708A, 2N709, 2N709-46, 2N709-51, 2N709A, 2N709A-46, 2N709A-51, 2N71, BC639, 2N710A, 2N711, 2N711A, 2N711B, 2N715, 2N716, 2N717, 2N717A
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