HBDW93C Specs and Replacement
Type Designator: HBDW93C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO220
HBDW93C Substitution
- BJT ⓘ Cross-Reference Search
HBDW93C datasheet
NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -65 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -65 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
Detailed specifications: HB857 , HBD195 , HBD196 , HBD241C , HBD435 , HBD436 , HBD681 , HBD682 , TIP122 , HBDW94C , HBU3150A , HBU406 , HBU406H , HC1061 , HC2073 , HC2344 , HC4054 .
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