HP102 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HP102 Specs and Replacement

Type Designator: HP102

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220

HP102 Substitution

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HP102 datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification 1998 Feb 18 File under Discrete Semiconductors, SC13b Philips Semiconductors Objective specification P-channel enhancement mode PHP1025 MOS transistor FEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low threshold PIN SYMBOL DESCRIPTION High-speed switching 1 s ... See More ⇒

Detailed specifications: HC4550, HC4793, HC5027, HC5039, HD313, HD880, HE2955, HE3055, S8550, HP107, HP122, HP122U, HP122W, HP127, HP127W, HP142T, HP142TS