All Transistors. HP122W Datasheet

 

HP122W Datasheet and Replacement


   Type Designator: HP122W
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO263
 

 HP122W Substitution

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HP122W Datasheet (PDF)

 ..1. Size:71K  shantou-huashan
 hp122w.pdf pdf_icon

HP122W

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122W APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-263 TstgStorage Temperature -55~150 TjJunction Tempera

 9.1. Size:129K  shantou-huashan
 hp122.pdf pdf_icon

HP122W

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122 APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperatur

 9.2. Size:72K  shantou-huashan
 hp122u.pdf pdf_icon

HP122W

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-251 TstgStorage Temperature -55~150 TjJunction Tempera

Datasheet: HD313 , HD880 , HE2955 , HE3055 , HP102 , HP107 , HP122 , HP122U , TIP35C , HP127 , HP127W , HP142T , HP142TS , HP142TSW , HP142TW , HP147T , HP147TS .

History: SLA4070 | 2SA984KE | UPT611 | 2N3627 | 2SB159 | 2SA1606 | TBC550

Keywords - HP122W transistor datasheet

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