HP122W pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HP122W Specs and Replacement

Type Designator: HP122W

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO263

HP122W Substitution

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HP122W datasheet

..1. Size:71K shantou-huashan

hp122w.pdf pdf_icon

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122W APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-263 Tstg Storage Temperature -55 150 Tj Junction Tempera... See More ⇒

9.1. Size:129K shantou-huashan

hp122.pdf pdf_icon

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122 APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -55 150 Tj Junction Temperatur... See More ⇒

9.2. Size:72K shantou-huashan

hp122u.pdf pdf_icon

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-251 Tstg Storage Temperature -55 150 Tj Junction Tempera... See More ⇒

Detailed specifications: HD313, HD880, HE2955, HE3055, HP102, HP107, HP122, HP122U, BD335, HP127, HP127W, HP142T, HP142TS, HP142TSW, HP142TW, HP147T, HP147TS