HSBD135 Specs and Replacement
Type Designator: HSBD135
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
HSBD135 Substitution
- BJT ⓘ Cross-Reference Search
HSBD135 datasheet
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD138 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
Detailed specifications: HP50, HS2236, HS600K, HS631K, HS649A, HS669A, HS772, HS882, TIP2955, HSBD136, HSBD137, HSBD138, HSBD139, HSBD140, HSBD175, HSBD176, HSBD177
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