HSBD137 Specs and Replacement
Type Designator: HSBD137
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
HSBD137 Substitution
- BJT ⓘ Cross-Reference Search
HSBD137 datasheet
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD138 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
Detailed specifications: HS600K, HS631K, HS649A, HS669A, HS772, HS882, HSBD135, HSBD136, 2SC2240, HSBD138, HSBD139, HSBD140, HSBD175, HSBD176, HSBD177, HSBD178, HSBD179
Keywords - HSBD137 pdf specs
HSBD137 cross reference
HSBD137 equivalent finder
HSBD137 pdf lookup
HSBD137 substitution
HSBD137 replacement
