All Transistors. HSBD137 Datasheet

 

HSBD137 Datasheet and Replacement


   Type Designator: HSBD137
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
      - BJT Cross-Reference Search

   

HSBD137 Datasheet (PDF)

 ..1. Size:118K  shantou-huashan
 hsbd137.pdf pdf_icon

HSBD137

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD137 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 8.1. Size:118K  shantou-huashan
 hsbd135.pdf pdf_icon

HSBD137

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD135 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 8.2. Size:119K  shantou-huashan
 hsbd138.pdf pdf_icon

HSBD137

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD138 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 8.3. Size:59K  shantou-huashan
 hsbd139.pdf pdf_icon

HSBD137

NPN SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD139 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

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Keywords - HSBD137 transistor datasheet

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