HSBD177 Datasheet and Replacement
Type Designator: HSBD177
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
HSBD177 Substitution
HSBD177 Datasheet (PDF)
hsbd177.pdf
NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD177 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hsbd178.pdf
PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD178 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hsbd179.pdf
NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hsbd175.pdf
NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD175 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
Datasheet: HSBD135 , HSBD136 , HSBD137 , HSBD138 , HSBD139 , HSBD140 , HSBD175 , HSBD176 , D667 , HSBD178 , HSBD179 , HSBD180 , HSBD233 , HSBD234 , HSBD236 , HSBD237 , HSBD238 .
History: 2SC4880
Keywords - HSBD177 transistor datasheet
HSBD177 cross reference
HSBD177 equivalent finder
HSBD177 lookup
HSBD177 substitution
HSBD177 replacement
History: 2SC4880
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