HSBD177 Datasheet and Replacement
Type Designator: HSBD177
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
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HSBD177 Datasheet (PDF)
hsbd177.pdf
NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD177 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hsbd178.pdf
PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD178 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hsbd179.pdf
NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
hsbd175.pdf
NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD175 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CHDTA115TEGP | UN621K | ZTX300 | D11C1053 | KRA567U | BD544D | KTC5706D
Keywords - HSBD177 transistor datasheet
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History: CHDTA115TEGP | UN621K | ZTX300 | D11C1053 | KRA567U | BD544D | KTC5706D
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