All Transistors. HSBD376 Datasheet

 

HSBD376 Datasheet and Replacement


   Type Designator: HSBD376
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
      - BJT Cross-Reference Search

   

HSBD376 Datasheet (PDF)

 ..1. Size:251K  shantou-huashan
 hsbd376.pdf pdf_icon

HSBD376

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD376 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

 8.1. Size:251K  shantou-huashan
 hsbd377.pdf pdf_icon

HSBD376

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD377 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

 8.2. Size:251K  shantou-huashan
 hsbd375.pdf pdf_icon

HSBD376

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD375 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

 8.3. Size:251K  shantou-huashan
 hsbd378.pdf pdf_icon

HSBD376

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD378 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

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Keywords - HSBD376 transistor datasheet

 HSBD376 cross reference
 HSBD376 equivalent finder
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