HSBD378 Specs and Replacement
Type Designator: HSBD378
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
HSBD378 Substitution
- BJT ⓘ Cross-Reference Search
HSBD378 datasheet
Detailed specifications: HSBD233, HSBD234, HSBD236, HSBD237, HSBD238, HSBD375, HSBD376, HSBD377, B647, HSBD379, HSBD380, HSBD433, HSBD434, HSBD435, HSBD436, HSBD437, HSBD438
Keywords - HSBD378 pdf specs
HSBD378 cross reference
HSBD378 equivalent finder
HSBD378 pdf lookup
HSBD378 substitution
HSBD378 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913 | 2sc711 datasheet | bu4508dx





