H1116 Datasheet and Replacement
Type Designator: H1116
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: TO92
H1116 Substitution
H1116 Datasheet (PDF)
h1116.pdf

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1116 APPLICATIONS Audio frequency power Aamplifier& Medium Speed switching Low frequency power amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature
Datasheet: HSBD441 , HSBD442 , HSC2621 , H1008 , H1015 , H1020 , H1020S , H1068 , 13007 , H1246 , H1266 , H1268 , H1270 , H128M , H1300 , H1302 , H1420 .
History: 2SA1797Q | BDW93FI | BUY23B | 2SC615 | 2N3178 | PDTC124TT | NSVBC848CLT1G
Keywords - H1116 transistor datasheet
H1116 cross reference
H1116 equivalent finder
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History: 2SA1797Q | BDW93FI | BUY23B | 2SC615 | 2N3178 | PDTC124TT | NSVBC848CLT1G



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