H1116 Specs and Replacement
Type Designator: H1116
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Package: TO92
H1116 Substitution
- BJT ⓘ Cross-Reference Search
H1116 datasheet
Detailed specifications: HSBD441, HSBD442, HSC2621, H1008, H1015, H1020, H1020S, H1068, C5198, H1246, H1266, H1268, H1270, H128M, H1300, H1302, H1420
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