All Transistors. H1116 Datasheet

 

H1116 Datasheet and Replacement


   Type Designator: H1116
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 135
   Noise Figure, dB: -
   Package: TO92
 

 H1116 Substitution

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H1116 Datasheet (PDF)

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H1116

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1116 APPLICATIONS Audio frequency power Aamplifier& Medium Speed switching Low frequency power amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Keywords - H1116 transistor datasheet

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