H1616 Datasheet, Equivalent, Cross Reference Search
Type Designator: H1616
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: TO92
H1616 Transistor Equivalent Substitute - Cross-Reference Search
H1616 Datasheet (PDF)
..1. Size:107K shantou-huashan
h1616.pdf
h1616.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1616 APPLICATIONS Audio frequency power Aamplifier& Medium Speed switching Low frequency power amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: GT811
