H337 PDF and Equivalents Search

 ..1. Size:86K  shantou-huashan

 h337.pdf

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H337 SWITCHING AND AMPLFIER APPLICATIONS Suitable for AF-Driver stages and low power output stages ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC... See More ⇒

 0.1. Size:379K  1

 mch3375.pdf

MCH3375 Ordering number ENA0342 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH3375 Applications Features ON-resistance RDS(on)1=227m (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sourc... See More ⇒

 0.2. Size:276K  sanyo

 mch3376.pdf

MCH3376 Ordering number ENA1564 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH3376 Applications Features Low ON-resistance. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID ... See More ⇒

 0.3. Size:264K  sanyo

 mch3374.pdf

Ordering number ENA0857 MCH3374 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3374 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ... See More ⇒

 0.4. Size:66K  sanyo

 mch3377.pdf

Ordering number ENA0957 MCH3377 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH3377 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)... See More ⇒

 0.5. Size:1015K  onsemi

 mch3376.pdf

Ordering number ENA1564B MCH3376 Power MOSFET http //onsemi.com 20V, 241m , 1.5A, Single P-Channel Features ESD diode-Protected gate Drive at low voltage 1.8V drive High speed switching and Low loss Low RDS(on) Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Sou... See More ⇒

 0.6. Size:569K  onsemi

 mch3374.pdf

MCH3374 Power MOSFET 12V, 70m , 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology,which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-R... See More ⇒

 0.7. Size:1020K  onsemi

 mch3377.pdf

Ordering number ENA0957B MCH3377 P-Channel Power MOSFET http //onsemi.com 20V, 3A, 83m , Single MCPH3 Features Ultrahigh-spees switching. 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS... See More ⇒