H337 Datasheet, Equivalent, Cross Reference Search
Type Designator: H337
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100(TYP) MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
H337 Transistor Equivalent Substitute - Cross-Reference Search
H337 Datasheet (PDF)
h337.pdf
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H337 SWITCHING AND AMPLFIER APPLICATIONS Suitable for AF-Driver stages and low power output stages ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PC
mch3375.pdf
MCH3375Ordering number : ENA0342SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3375ApplicationsFeatures ON-resistance RDS(on)1=227m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sourc
mch3376.pdf
MCH3376Ordering number : ENA1564SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3376ApplicationsFeatures Low ON-resistance. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID
mch3374.pdf
Ordering number : ENA0857 MCH3374SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETMCH3374 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS
mch3377.pdf
Ordering number : ENA0957 MCH3377SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3377ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)
mch3376.pdf
Ordering number : ENA1564BMCH3376Power MOSFEThttp://onsemi.com 20V, 241m , 1.5A, Single P-ChannelFeatures ESD diode-Protected gate Drive at low voltage:1.8V drive High speed switching and Low loss Low RDS(on) Pb-free and RoHS Compliance SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sou
mch3374.pdf
MCH3374 Power MOSFET 12V, 70m, 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology,which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-R
mch3377.pdf
Ordering number : ENA0957BMCH3377P-Channel Power MOSFEThttp://onsemi.com 20V, 3A, 83m , Single MCPH3Features Ultrahigh-spees switching. 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
