H789A Specs and Replacement
Type Designator: H789A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO92
H789A Substitution
- BJT ⓘ Cross-Reference Search
H789A datasheet
Detailed specifications: H558, H5609, H5610, H562, H639, H643, H732TM, H733, 2SD669, H8050S, H817, H8550S, H9012, H9013, H9015, H9018, H926
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