H9012 Specs and Replacement
Type Designator: H9012
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 78
Package: TO92
H9012 Substitution
- BJT ⓘ Cross-Reference Search
H9012 datasheet
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissip... See More ⇒
Detailed specifications: H639, H643, H732TM, H733, H789A, H8050S, H817, H8550S, 2N2907, H9013, H9015, H9018, H926, H928S, H930, H933, H984
Keywords - H9012 pdf specs
H9012 cross reference
H9012 equivalent finder
H9012 pdf lookup
H9012 substitution
H9012 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet