HA06 Datasheet, Equivalent, Cross Reference Search
Type Designator: HA06
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
HA06 Transistor Equivalent Substitute - Cross-Reference Search
HA06 Datasheet (PDF)
ha06.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA06 APPLICATIONS General Purpose Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation
swha065r03vlt.pdf
SW065R03VLTN-channel Enhanced mode DFN5*6 MOSFETFeaturesDFN5*6 BVDSS : 30V High ruggedness Low RDS(ON) (Typ 9.7m)@VGS=4.5V18 ID : 58A(Typ 6.4m)@VGS=10V2 7RDS(ON) : 9.7m@VGS=4.5V6 Low Gate Charge (Typ 34nC)35 Improved dv/dt Capability 46.4m@VGS=10V 100% Avalanche Tested Application:Synchronous Rectification,DLi Battery Protect
swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V
swha069r10vs.pdf
SW069R10VSN-channel Enhanced mode DFN5*6 MOSFETFeaturesDFN5*6BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9m)@VGS=4.5V18ID : 60ALow RDS(ON) (Typ 7m)@VGS=10V 2 763 RDS(ON) : 9m@VGS=4.5V Low Gate Charge (Typ 45nC)54 Improved dv/dt Capability 7m@VGS=10V 100% Avalanche Tested Application: Li Battery Protect Board,DSynchronous
swi069r06vt swha069r06vt.pdf
SW069R06VT N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features TO-251 DFN5*6 BVDSS : 60V High ruggedness ID : 60A Low RDS(ON) (Typ 7.0m)@VGS=4.5V (Typ 6.0m)@VGS=10V RDS(ON) :7.0m@VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m@VGS=10V 1 G(4) D(5,6,7,8) 100% Avalanche Tested 2 3 S(1,2,3) D Application
swha069r06vt.pdf
SW069R06VTN-channel Enhanced mode DFN5*6 MOSFETFeaturesDFN5*6BVDSS : 60V High ruggednessID : 60A Low RDS(ON) (Typ 5.7m)@VGS=4.5V1 82 7(Typ 4.9m)@VGS=10V6 RDS(ON) :5.7m@VGS=4.5V3 Low Gate Charge (Typ 84nC) 54 Improved dv/dt Capability 4.9m@VGS=10V 100% Avalanche TestedD Application:Electronic Ballast, Motor ControlInverter 4.G
swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
