HA06 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HA06 Specs and Replacement

Type Designator: HA06

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

HA06 Substitution

- BJT ⓘ Cross-Reference Search

HA06 datasheet

..1. Size:105K shantou-huashan

ha06.pdf pdf_icon

... See More ⇒

0.1. Size:730K samwin

swha065r03vlt.pdf pdf_icon

SW065R03VLT N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 30V High ruggedness Low RDS(ON) (Typ 9.7m )@VGS=4.5V 1 8 ID 58A (Typ 6.4m )@VGS=10V 2 7 RDS(ON) 9.7m @VGS=4.5V 6 Low Gate Charge (Typ 34nC) 3 5 Improved dv/dt Capability 4 6.4m @VGS=10V 100% Avalanche Tested Application Synchronous Rectification, D Li Battery Protect... See More ⇒

0.2. Size:784K samwin

swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf pdf_icon

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V ... See More ⇒

0.3. Size:747K samwin

swha069r10vs.pdf pdf_icon

SW069R10VS N-channel Enhanced mode DFN5*6 MOSFET Features DFN5*6 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9m )@VGS=4.5V 1 8 ID 60A Low RDS(ON) (Typ 7m )@VGS=10V 2 7 6 3 RDS(ON) 9m @VGS=4.5V Low Gate Charge (Typ 45nC) 5 4 Improved dv/dt Capability 7m @VGS=10V 100% Avalanche Tested Application Li Battery Protect Board, D Synchronous ... See More ⇒