All Transistors. HEP32 Datasheet

 

HEP32 Datasheet and Replacement


   Type Designator: HEP32
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220AB
 

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HEP32 Datasheet (PDF)

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HEP32

PNP S I L I C O N T R A N S I S T O R HEP32 Series Shantou Huashan Electronic Devices Co.,Ltd. HEP32/HEP32A/HEP32B/HEP32C APPLICATIONS Mediu Power Linear switching Applications. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220AB TstgStorage Temperature -55~150 TjJunction Temperature

Datasheet: HD882S , HD965 , HEB834 , HED880 , HEP31 , HEP31A , HEP31B , HEP31C , 13009 , HEP32A , HEP32B , HEP32C , HEP41C , HEP42C , HM28S , HS733 , HS945 .

History: ECG2319 | 2SC2758U14 | 2SC3303 | BLU51 | 2N1557A | KTA1695 | NR431FF

Keywords - HEP32 transistor datasheet

 HEP32 cross reference
 HEP32 equivalent finder
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