HEP32A Specs and Replacement

Type Designator: HEP32A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220AB

 HEP32A Substitution

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HEP32A datasheet

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HEP32A

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Detailed specifications: HD965, HEB834, HED880, HEP31, HEP31A, HEP31B, HEP31C, HEP32, D882, HEP32B, HEP32C, HEP41C, HEP42C, HM28S, HS733, HS945, HX1267

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