SFT2010 Specs and Replacement

Type Designator: SFT2010

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 600 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 200 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 1200 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3

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SFT2010 datasheet

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SFT2010

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Detailed specifications: HX128M, HX2785, HX3199, HX3904, HX3906, HX789A, SFT1202E, SFT1202TLE, MJE340, SFT2012, SFT2014, SFT3852-59, SFT5001, SFT6284, SFT6287, SFT6678-3, SFT6678M

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