SBP13007D Specs and Replacement

Type Designator: SBP13007D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 6.5 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

 SBP13007D Substitution

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SBP13007D datasheet

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SBP13007D

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SBP13007D

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SBP13007D

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 6.3. Size:335K  winsemi

 sbp13007o.pdf pdf_icon

SBP13007D

SBP13007-O SBP13007-O SBP13007-O SBP13007-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C... See More ⇒

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Detailed specifications: SBP13003, SBP13003D, SBP13003H, SBP13003O, SBP13005D, SBP13005D1, SBP13005O, SBP13005S, 2SC2655, SBP13007K, SBP13007O, SBP13007S, SBP13007X, 3DD4206, 3DD5038, SCG102, SCG118

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