SCG102 Datasheet, Equivalent, Cross Reference Search
Type Designator: SCG102
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
SCG102 Transistor Equivalent Substitute - Cross-Reference Search
SCG102 Datasheet (PDF)
..1. Size:124K china
scg102.pdf
scg102.pdf
SCG102 PNP A B C PCM Ta=25 1002 mW ICM 25 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.01 mA 30 V V(BR)CEO ICE=0.01 mA 20 V V(BR) EBO IEB=0.01 mA 4.0 V ICBO VCB=10V 0.01 A ICEO VCE=10V 0.1 A IEBO VEB=2V 0.1 A VBEsat 1.0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
