SD1014-02 Datasheet and Replacement

HG RF POWER TRANSISTORSD1014-02SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORD E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SThe SD1014-02 is an epitaxial silicon NPN planar transistor MHz 175designed primarily for VHF mobile and mar

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT1010LT1/DMMBT1010LT1Low Saturation Voltage MSD1010T1Motorola Preferred DevicesPNP Silicon Driver TransistorsPart of the GreenLine Portfolio of devices with energyconserving traits.This PNP Silicon Epitaxial Planar Transistor is designed to conserve energyPNP GENERALin general purpose driver applicatio

Ordering number:ENN676DPNP/NPN Epitaxial Planar Silicon Transistors2SB808/2SD1012Low-Voltage Large-CurrentAmplifier ApplicationsPackage Dimensionsunit:mm2033A[2SB808/2SD1012]2.24.00.40.50.40.41 2 31.3 1.31 : Emitter2 : Collector( ) : 2SB8083 : Base3.03.8 SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions R

Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1

Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1

Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2

Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2

SD1015 PCB24

HG RF POWER TRANSISTORSD1013-3SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORSD1013-3SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep.

HG RF POWER TRANSISTORSD1019-2SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .380 4 LEAD FLGThe HG SD1019-2 is Designed forVHF Communications up to 136 MHzFEATURES:PG = 4.5 dB Minimum at 150 MHzOmnigold Metallization SystemMAXIMUM RATINGSIC 9.0 AVCB 65 VVCE 35 VPDISS 117 W @ TC = 25 OCTJ -65 OC to +200 OCTSTG -65 OC t

HG RF POWER TRANSISTORSD1013SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 150 MHz 28 VOLTS POUT = 10 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATIONDESCRIPTION:DESCRIPTION:The SD1013 is an epitaxial silicon NPN planar transistordesigned primarily for VHF FM applications. The device utilizes emitter ballasting r

HG RF POWER TRANSISTORSD1018SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORD E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SThe SD1018 is an epitaxial silicon NPN planar transistor designed 175 MHz primarily for VHF mobile and marine tra

isc Product Specificationisc Silicon NPN Power Transistor 2SD1016DESCRIPTIONHigh Collector-Base Voltage-: V = 1500V(Min)CBOHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB