SD4011 Specs and Replacement
Type Designator: SD4011
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 31.8 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 1.59 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 860 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: M122
- BJT ⓘ Cross-Reference Search
SD4011 datasheet
..1. Size:52K st
sd4011.pdf 
SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .GOLD METALLIZATION .INTERNAL INPUT MATCHING .COMMON EMITTER .OVERLAY GEOMETRY .CLASS A OPERATION .METAL/CERAMIC PACKAGE .P 4 WMIN. WITH 8 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD4011 SUTV040 PIN CONNECTION DESCRIPTION The SD4011 is a gold metallized NPN silicon bipolar device optimized fo... See More ⇒
..2. Size:365K hgsemi
sd4011.pdf
HG RF POWER TRANSISTOR SD4011 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .GOLD METALLIZATION .INTERNAL INPUT MATCHING .COMMON EMITTER .OVERLAY GEOMETRY .CLASS A OPERATION .METAL/CERAMIC PACKAGE .P 4 W MIN. WITH 8 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD4011 SUTV040 PI... See More ⇒
9.1. Size:87K st
sd4017.pdf
SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS .GOLD METALLIZATION .DIFFUSED EMITTER BALLASTING .INTERNAL INPUT MATCHING .DESIGNED FOR LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY .COMMON EMITTER CONFIGURATION .230 6LFL (M142) .P 30 W MIN. WITH 7.5 dB GAIN = OUT epoxy sealed . 55% TYPICAL C = .TYPICAL LOAD MISMATCH CAPABILITY ORDER CODE BRANDING ... See More ⇒
9.2. Size:50K st
sd4013.pdf
SD4013 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .INTERNAL INPUT MATCHING .METAL/CERAMIC PACKAGE .EMITTER BALLASTED .20 1 VSWR CAPABILITY .P 25 W MIN. WITH 9 dB GAIN = OUT .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING SD4013 SUMIL25 PIN CONNECTION DESCRIPTION The SD4013 is a gold metallized epitaxial silicon ... See More ⇒
9.3. Size:70K st
sd4010.pdf
SD4010 RF & MICROWAVE TRANSISTORS UHF TV LINEAR APPLICATIONS .470-860 MHz .26.5 VOLTS .GOLD METALLIZATION .P 20.0W MIN. WITH 9.5 dB GAIN = OUT .INTERNAL INPUT MATCHING .DIFFUSED EMITTER BALLAST RESISTORS .400 x .425 4LFL (M119) hermetically sealed ORDER CODE BRANDING SD4010 SUTV200 PIN CONNECTION DESCRIPTION The SD4010 is a gold metallized epitaxial silicon NPN planar transist... See More ⇒
9.4. Size:71K fairchild semi
ksd401.pdf
KSD401 TV Vertical Deflection Output Collector-Base Voltage VCBO=200V Collector Current IC=2A Collector Dissipation PC=25W(TC=25 C) Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-... See More ⇒
9.7. Size:376K cdil
csd401.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSD401 CSD401 NPN PLASTIC POWER TRANSISTOR Complementary CSB546 TV Vertical Deflection Output Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 ... See More ⇒
9.8. Size:55K jmnic
2sd401a.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base ... See More ⇒
9.9. Size:117K jmnic
2sd401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter ... See More ⇒
9.10. Size:351K hgsemi
sd4013.pdf
HG RF POWER TRANSISTOR SD4013 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR SD4013 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .INTERNAL INPUT MATCHING .METAL/CERAMIC PACKAGE .EMITTER BALLASTED .20 1 VSWR CAPABILITY .POUT 25 W MIN. WITH 9 dB GAIN = .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING ... See More ⇒
9.11. Size:1153K winsok
wsd40120dn56.pdf
WSD40120DN56 N-Ch MOSFET General Description Product Summery The WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120A density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g... See More ⇒
9.12. Size:2081K winsok
wsd40120dn56g.pdf
WSD40120DN56G N-Ch MOSFET General Description Product Summery The WSD40120DN use advanced SGT BVDSS RDSON ID MOSFET technology to provide low RDS(ON), 40V 1.8m 120A low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in Consumer electronic power supply S... See More ⇒
9.13. Size:125K inchange semiconductor
2sd401a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mount... See More ⇒
9.14. Size:149K inchange semiconductor
2sd401.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 ... See More ⇒
9.15. Size:104K inchange semiconductor
ksd401.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD401 DESCRIPTION Collector-Base Breakdown Voltage- V(BR)CBO= 200V(Min) Collector Current- IC= 2A Collector Power Dissipation- PC= 25W@ TC= 25 Complement to Type KSB546 APPLICATIONS Designed for TV Vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) ... See More ⇒
Detailed specifications: SCH2202TLE, SD1013, SD1013-3, SD1014-02, SD1015, SD1018, SD1019-2, SD1019-5, TIP142, SD4013, SD4590, S8050B, S8050C, S8050D, S8050G, S8550B, S8550C
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