S9012H Specs and Replacement
Type Designator: S9012H
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 144
Package: TO92
S9012H Substitution
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S9012H datasheet
S9012-G MCC Micro Commercial Components TM S9012-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9012-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a... See More ⇒
R UMW UMW S9012 SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S9013 1. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO... See More ⇒
SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units V... See More ⇒
SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter ... See More ⇒
MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating ... See More ⇒
MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating ... See More ⇒
STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description General purpose application. Switching application. Features Excellent hFE linearity. Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06 0.1 1.27 Typ. 2.54 ... See More ⇒
S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM - 0.5 A A Emitter H 0.013 0.100 L Collector-base v... See More ⇒
S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.... See More ⇒
TRANSISTOR (PNP) 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit XXX ... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors JC T SOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter ... See More ⇒
S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collect... See More ⇒
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 GM9013 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATIN... See More ⇒
S9012 PNP Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= -500mA Dim Min Max A 2.70 3.10 E Complementary To S9013. B 1.10 1.50 K B C 1.0 Typical Excellent HFE Linearity. D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 APPLICATIONS G H 0.02 0.1 J 0.1 Typical High Collector Current. H K 2.20 2.60 C All Dimensions in mm MAXIMUM... See More ⇒
S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Coll... See More ⇒
S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector ... See More ⇒
S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 15... See More ⇒
S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http //www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characterist... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM 0.625 W (Tamb=25 ) 3. COLLECTOR Collector current ICM -0.5 A 1 2 3 Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Tj, Tstg -55 to +150... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Unit mm TJ, Tst... See More ⇒
Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation Pc=225mW MECHANICAL DATA * Case SOT-23 Molded plastic * Epoxy UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T... See More ⇒
Product specification PNP Silicon Epitaxial Planar Transistor S9012 FEATURES Pb High Collector Current.(I = -500mA C Lead-free Complementary To S9013. Excellent H Linearity. FE APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9012 2T1 SOT-23 none is for Lead Free package; G is fo... See More ⇒
S9012 PNP Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S9013. Excellent HFE Linearity. APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB... See More ⇒
S9012 PNP SMD Transistors FEATURES SOT 23 High Collector Current Complementary To S9013 Excellent hFE Linearity MARKING 2T1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500... See More ⇒
S9012 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 As complementary type the NPN transistor S9013 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Voltage -25 ... See More ⇒
S9012 TRANSISTOR (PNP) FEATURES SOT-23 High Collector Current Complementary To S9013 Excellent hFE Linearity 3 2 MARKING 2T1 1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA ... See More ⇒
PNP SMD Transistors Formosa MS S9012 SOT 23 FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector ... See More ⇒
S9 012 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High Collector Current. Complementary to S9013. Excellent hFE Linearity. Marking 2T1 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Po... See More ⇒
S9012 PNP Epitaxial Silicon Transistor TO-92 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.25 0.2 2 Base 1 2 3 Tj, Tstg -55 to +150 3 Collector 2.54 0.1 ... See More ⇒
S9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9013. Excellent hFE Linearity. SOT-23 Plastic Package MARKING 2T1 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -25 V Emitter Base Voltage VE... See More ⇒
www.msksemi.com S9012-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Collector Current Complementary To 1. BASE S9013-MS 2. EMITTER SOT 23 MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base... See More ⇒
s9012 s9012-l s9012-h s9012-j.pdf 
S9012 PNP Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Excellent hFE liearity Simplified outline(SOT-23) Collector Current IC=-0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 V Collector Current to Continuous IC -500 mA Collector Power Dis... See More ⇒
Jingdao Microelectronics co.LTD S9012 General Purpose Transistor PNP Silicon FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9012 = 2T1 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO -25 Vdc ... See More ⇒
S9012 S9012 S9012 S9012 S9 0 12 TRANSISTOR(PNP) FEATURES High Collector Current SOT-23 Complementary To S9013 Excellent hFE Linearity 1 BASE 2 EMITTER MARKING 2T1 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 ... See More ⇒
S9012 S9012 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9013 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking 2T1 Maximum Ratings & Thermal Characteristics TA = 25 C un... See More ⇒
S9012 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9013 Excellent hFE linearity 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Col... See More ⇒
S9012W/SOT323 TRANSISTOR (PNP) FEATURES Complementary to S9013T Excellent h linearity FE MARKING 2T1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V -40 V CBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I Collector Current -Continuous -500 mA C P Collector Power Dissipation 300 mW C T Junc... See More ⇒
S9012T TRANSISTOR PNP FEATURES SOT-523 Complementary to S9013T Excellent hFE linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC C... See More ⇒
S9012 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V. Collector current IC=-0.5A. ansition frequency fT>150MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol... See More ⇒
S9012 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to S9013 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol ... See More ⇒
Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @ ... See More ⇒
isc Silicon PNP Power Transistor S9012 DESCRIPTION Excellent hFE linearity Complement to NPN Type S9013 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitt... See More ⇒
Detailed specifications: S8050G, S8550B, S8550C, S8550D, S8550G, S9011, S9011LT1, S9012G, BD333, S9012I, S9012LT, S9012W, S9013G, S9013H, S9013I, S9014B, S9014C
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