S9015B Datasheet, Equivalent, Cross Reference Search

S9015-BMCCMicro Commercial ComponentsTMS9015-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S9015-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current -0.1A Collector-base Voltage -50VTransistors Operating

SS9015Low Frequency, Low Noise Amplifier Complement to SS9014TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -100 mAPC Collector Power Dissi

SS9015 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY, LOW NOISE AMPLIFIERTO-92 Complement to SS9014ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -45VEmitter-Base Voltage VEBO -5mACollector Current IC -100mWCollector Dissipation PC 450Junction Temperature TJ 150Storage Tem

MMS9015Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1PNP Silicon Plastic- Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSEncapsulate Compliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Temperature Range: -55

STS9015SemiconductorSemiconductorPNP Silicon TransistorDescription General purpose application. Switching application.Features Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) Low noise : NF = 10dB(Max.) Complementary pair with STS9014Ordering Information Type NO. Marking Package Code STS9015 STS9015 TO-92 Outline Dimensions uni

S9015PNP SiliconElektronische Bauelemente Low Frequency, Low Noise AmplifierRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation11C 0.890 1.1102 BasePCM : 0.2 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : -0.1 A AEmitterH 0.013 0.100

S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity CLASSIFICATION OF hFE Product-Rank S9015T-A S9015T-B S9015T-C S9015T-D Range 60~150

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9015W TRANSISTOR (PNP) SOT323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO2. EMITTER V Collector-Emitter Voltage -45 V CEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9015 TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base V

S901 5WTRANSISTOR(PNP)SOT323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO2. EMITTER V Collector-Emitter Voltage -45 V CEO3. COLLECTOR V Emitter-Base Voltage -5 V EBOIC Collector Current -100 mA P Collector Power Diss

S901 5TRANSISTOR(PNP)SOT-23 FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W T

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9015FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)Low Noise NF=1dB(Typ.),10db(Max.).Complementary to GM9014 GM9014

S9015 Silicon Epitaxial Planar TransistorFEATURESA SOT-23 Complementary To S9014. Dim Min MaxA 2.70 3.10E Excellent HFE Linearity. B 1.10 1.50K BC 1.0 Typical Power dissipation.(PC=0.2W) D 0.4 TypicalE 0.35 0.48JDG 1.80 2.00GH 0.02 0.1APPLICATIONS J 0.1 TypicalHK 2.20 2.60 Low frequency , low noise amplifier. CAll Dimensions in mm ORDERING

S9015 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.

S9015(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Di

S9015LT1PNP312SOT-23ValueVCEO -45-50-5-1002251.8556S9015QLT1=15Q S9015RLT1=15R S9015SLT1=15S-0.1-45-40-100-5.0-100u-0.1-40-0.1 u-3.0WEITRON 1/ 28-Apr-2011http://www.weitron.com.twS9015LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Max UnitMinON CHARACTERISTICSDC Current Gain

S9015PNP General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -45 VdcCollector-Base Voltage VCBO -50VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current IC100 mAdcPD 0.4Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55 to +150S

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25) Collector current 2. 4 ICM: -0.1 A 1. 3 Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55 to

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES 2. BASE High total power dissipation.(PC=0.45W) High hFE and good linearity 3. COLLECTOR Complementary to S9014 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Vol

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING:M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

DIP Type e TransistorsSMD TypPNP TransistorsSS9015Unit:mmTO-924.8 0.3 3.8 0.3FeaturesComplementary to SS90140.60 Max0.45 0.1 0.521 31.Emitter2.Base1.272.543.CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -5 VCollector Current

Product specification Silicon Epitaxial Planar Transistor S9015 FEATURES Pb Complementary To S9014. Lead-free Excellent H Linearity. FE Power dissipation.(P =0.2W) CAPPLICATIONS Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9015 M6 SOT-23 : none is for Lead Free package; G is for

S9015 TRANSISTOR PNPTRANSISTOR PNP TRANSISTOR PNPTRANSISTOR PNPSOT-23 FEATURES Complementary to S9014 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -5 V EBOI Collector Current -100 mA CP Collector Pow

S9015WTRANSISTOR(PNP)FEATURES Small Surface Mount PackageSOT323 High DC Current GainMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASEVCBO Collector-Base Voltage -50 V 2. EMITTERV Collector-Emitter Voltage -45 V CEO3. COLLECTORV Emitter-Base Voltage -5 V EBOI Collector Current -100 mA CP Collector Power Dissipatio

RUMW UMW S9015SOT-23 Plastic-Encapsulate TransistorsSOT-23 S9015 TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -C

S9015SOT-23 PNP Plastic-Encapsulate Transistors FEATURES SOT-23 Complementary to S9014 MARKING: M6 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Po

S9015Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS FeaturesSOT-23 As complementary type the NPN transistor S9014 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V1. BASE VCEO Collector-Emitter Voltage -

S9015FEATURES High Collector Current. SOT-23 Complementary to S9014. Excellent hFE Linearity.MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBOV Collector-Emitter Voltage -45 V CEOVEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA P Collector Power Dissipation 200 mW CR Thermal Resistance

S9 015SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Complementary to S9014 Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current -100 mA CP Collector Power Dissipation 200 mW CRJA Thermal Resistance From Junction To Ambient 625 /W

S9015NPN Silicon Epitaxial Planar TransistorFEATURES High Collector Current.(IC= 500mA Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PC=300mW) APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 V

S9015 SOT-23 Plastic-Encapsulate TransistorsS9015 TRANSISTOR (PNP)SOT-23 FEATURES Complementary To S9014 1. BASEMARKING: M6 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBOV Collector-Emitter Voltage -45 V CEOVEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10

www.msksemi.comS9015-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES1. BASE Complementary to S9014-MS2. EMITTERSOT23 MARKING: M6 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEOV Emitter-Base Voltage -5 V EBOI Collec

Jingdao Microelectronics co.LTDS9015General Purpose TransistorPNP SiliconFEATURES Complementary to S9014SOT-23 3COLLECTOOR31DEVICE MARKINGBASES9015 = M612EMITTER2MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO -45 VdcCollectorBase Voltage VCBO -50 VdcEmitterBase Voltag

S901 5 TRANSISTOR(PNP)SOT-23 FEATURES Complementary to S9014 MARKING: M6 1. BASE 2. EMITTER 3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj J

S9015 SOT-23 PNP Transistors32 1.BaseFeatures 2.Emitter1 3.CollectorComplementary to S9014 Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -0.1 ACollector Power Dissipation PC 0.2 WJunction Te

S9015SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING:M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -50 V VCEO Collector-Emitter Voltage -

S9015 TRANSISTOR (PNP)SOT323 FEATURES Small Surface Mount Package High DC Current GainMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASEV Collector-Base Voltage -50 V CBO2. EMITTERV Collector-Emitter Voltage -45 V CEO3. COLLECTORV Emitter-Base Voltage -5 V EBOIC Collector Current -100 mA P Collector Power Dissipati

S9015S9015S9015 TRANSISTOR(PNP)FEATURES SOT-23 Complementary to S9014 1BASE 2EMITTER 3COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -0.1 APC Collector Power Dissipation 0

RoHS RoHSCOMPLIANT COMPLIANTS9015 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking:M6 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -50 Collector-Emitter Voltage V

S9015 S9015 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9014 Power Dissipation of 200mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: M6 Maximum Ratings & Thermal Characteristics TA = 25C unl

TRANSISTOR(PNP)FEATURES Small Surface Mount Package SOT323 High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO2. EMITTER VCEO Collector-Emitter Voltage -45 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V I Collector Current -100 mA CP Collector Power Dissipation 200

S9015 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to S9014 1BASE 2EMITTER 3COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDS9015 FEATURES Excellent H Linearity H h (-0.1mA)/ h (-2mA)=0.95(Typ.)FE FE FE FELow Noise NF=1dB(Typ.),10db(Max.).Complementary to S9014 S9014 MAXIMUM RATINGS (Ta=25) CHARACTERISTIC Symbol Rating Unit

S9015General Purpose Transistor PNP SiliconFEATURES Complementary to S9015eAMDe ea CEL1LHE1.BASE2.EMITTERSOT-23 mechanical data3.COLLECTORUNIT A C D E HE e M L L1 aMarkingmax1.1 0.15 1.4 3.0 2.6 0.5 1.95 0.00.55 0.36mm(ref) (ref)min 0.9 0.08 1.2 2.8 2.2 0.3 1.7 0.15Type number Marking codemax43 6 55 118 102 20 77 0.0S9015 M622 14m

S9015BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to S9014 Excellent h LinearityFE Surface Mount deviceMECHANICAL DATA SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitVCollector-Base

PNP S9015S9015 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to S9014 1BASE 2EMITTER 3COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Cu

S901 5 Features Complementary to S9014 MARKING: M6 SOT-23ADim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00MAXIMUM RATINGS (TA=25 unless otherwise noted) J0.013 0.10KSymbol Parameter Value KUnits 0.903 1.10JLVCBO Collector-Base V