SBC807-16LT3G Datasheet, Equivalent, Cross Reference Search

   Type Designator: SBC807-16LT3G
   SMD Transistor Code: 5A1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

SBC807-16LT3G Transistor Equivalent Substitute - Cross-Reference Search

SBC807-16LT3G Datasheet (PDF)

..1. Size:89K onsemi
sbc807-16lt3g.pdf

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

3.1. Size:89K onsemi
sbc807-16lt1g.pdf

7.1. Size:89K onsemi
sbc807-40lt3g.pdf

7.2. Size:89K onsemi
sbc807-25lt1g.pdf

7.3. Size:89K onsemi
sbc807-25lt3g.pdf

7.4. Size:74K onsemi
sbc807-40wt1g.pdf

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

7.5. Size:89K onsemi
sbc807-40lt1g.pdf