SBC817-40LT1G Datasheet, Equivalent, Cross Reference Search

   Type Designator: SBC817-40LT1G
   SMD Transistor Code: 6C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT23

SBC817-40LT1G Transistor Equivalent Substitute - Cross-Reference Search

SBC817-40LT1G Datasheet (PDF)

..1. Size:139K onsemi
bc817-16lt1g nsvbc817-16lt1g bc817-25lt1g sbc817-25lt1g bc817-40lt1g sbc817-40lt1g.pdf

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

..2. Size:89K onsemi
sbc817-40lt1g.pdf

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

3.1. Size:89K onsemi
sbc817-40lt3g.pdf