2N738 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N738
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 125 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO18
2N738 Transistor Equivalent Substitute - Cross-Reference Search
2N738 Datasheet (PDF)
2n7380.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7380 JANSM (3K RAD(Si)) JANSD (10K RAD(Si))JANSR (100K RAD(Si))JANSF (300K RAD(Si))ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Pa
2n7381.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7381 JANSM (3K RAD(Si)) JANSD (10K RAD(Si))JANSR (100K RAD(Si))JANSF (300K RAD(Si))ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Pa
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
