SBP5305DO Datasheet, Equivalent, Cross Reference Search
Type Designator: SBP5305DO
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
SBP5305DO Transistor Equivalent Substitute - Cross-Reference Search
SBP5305DO Datasheet (PDF)
sbp5305do.pdf
SemiWell Semiconductor SBP5305D-O Symbol High Voltage Fast Switching NPN Power Transistor 2 Features 1 3 Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolu
sbp5307do.pdf
SemiWell Semiconductor SBP5307D-O Symbol High Voltage Fast Switching NPN Power Transistor 2 Features 1 3 Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolu
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
