SBP5305DO Specs and Replacement
Type Designator: SBP5305DO
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
SBP5305DO Substitution
- BJT ⓘ Cross-Reference Search
SBP5305DO datasheet
SemiWell Semiconductor SBP5305D-O Symbol High Voltage Fast Switching NPN Power Transistor 2 Features 1 3 Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolu... See More ⇒
SemiWell Semiconductor SBP5307D-O Symbol High Voltage Fast Switching NPN Power Transistor 2 Features 1 3 Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolu... See More ⇒
Detailed specifications: SHN1B01FDW1T1G, SJ5438, SJT1941PPN, SJT5198NPN, SBP13009K, SBP13009O, SBP13009S, SBP5027R, 2N3055, SBP5307DO, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, SD1134-05
Keywords - SBP5305DO pdf specs
SBP5305DO cross reference
SBP5305DO equivalent finder
SBP5305DO pdf lookup
SBP5305DO substitution
SBP5305DO replacement
