SD1446 Datasheet and Replacement

SD1446RF POWER BIPOLAR TRANSISTORSUHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION.380 4L FL (M113)The SD1446 is a 12.5 V Class C epitaxial siliconepoxy sealedNPN planar transistor designed primarily for landmobile transmitt

HG RF POWER TRANSISTORSD1446SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDDESCRIPTION1.CollectorA2.EMITTERFThe SD1446 is a 12.5 V Class C epitaxial3.BASEqCsilicon NPN planar transistor designed primarily4.EMITTERU1 B5.FINfor land mobile transmitter applications. Thisdevice utilizes emitter ballasting and isw2 M Ccextremely stable and

Power Transistors2SD1446Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1446DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 500(Min) @ I = 2A, V = 2VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance

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SD1448 (TCC598)RF & MICROWAVE TRANSISTORSUHF TV/LINEAR APPLICATIONS.860 MHz.25 VOLTS.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P 4.0 W MIN. WITH 7.0 dB GAIN=OUT.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1448 TCC598PIN CONNECTIONDESCRIPTIONThe SD1448 is a silicon NPN bipolar device spe-cifically designed for high linearity application

SD1449 (TCC597)RF & MICROWAVE TRANSISTORSUHF TV\LINEAR APPLICATIONS.860 MHz.20 VOLTS.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P 1.0 W MIN. WITH 10.0 dB GAIN=OUT.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1449 TCC597PIN CONNECTIONDESCRIPTIONThe SD1449 is a silicon NPN bipolar device spe-cifically designed for high linearity applicatio

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SMALL-SIGNAL TRANSISTOR ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 High collector current. ICM= 1.5A High

SD1441NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG C A1 3 FEATURES: 2x NFULL R 175 MHz 12.5 V D PG = 5.0 dB at 150 W/175 MHz 4 2 Omnigold Metalization System B E .725/18,42 Common

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1

SD1448 (TCC598) SD1448RF & MICROWAVE TRANSISTORSSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORUHF TV/LINEAR APPLICATIONS.860 MHz.25 VOLTS.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P = 4.0 W MIN. WITH 7.0 dB GAINOUT.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1448 TCC598PIN CONNECTIONDESCRIPTIONThe SD1448 is a silicon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1445DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 10ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOFast Switching SpeedComplement to Type 2SB948Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power ampl

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

isc Silicon NPN Power Transistor 2SD1440DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION With TO-220Fa package Complement to type 2SB948/948A High speed switching Low collector saturation voltage APPLICATIONS For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAb

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD144DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR) CEOWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1444DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOComplement to Type 2SB956Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Power Transistor 2SD1441DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba