SD1458 Specs and Replacement
Type Designator: SD1458
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 225 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: SOT119
- BJT ⓘ Cross-Reference Search
SD1458 datasheet
..1. Size:56K st
sd1458.pdf 
SD1458 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .IMD -55 dB .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .HIGH SATURATED POWER CAPABILITY .500 6LFL (M111) .DESIGNED FOR HIGH POWER LINEAR epoxy sealed OPERATION ORDER CODE BRANDING .P 14 W MIN. WITH 14.0 dB GAIN OUT = SD1458 SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gol... See More ⇒
0.1. Size:41K panasonic
2sd1458 e.pdf
Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0... See More ⇒
0.2. Size:37K panasonic
2sd1458.pdf
Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0... See More ⇒
9.1. Size:61K st
sd1457.pdf
SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS .108 MHz .28 VOLTS .EFFICIENCY 75% .COMMON EMITTER .GOLD METALLIZATION .P 75 W MIN. WITH 10.0 dB GAIN = OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1457 SD1457 PIN CONNECTION DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF broadcast transmitters... See More ⇒
9.2. Size:67K st
sd1459.pdf
SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .COMMON EMITTER .GOLD METALLIZATION .HIGH SATURATED POWER CAPABILITY .DIFFUSED EMITTER BALLAST RESISTORS .500 Dia .550 4L STUD (M164) .P 20 W MIN. WITH 7.5 dB GAIN OUT = epoxy sealed ORDER CODE BRANDING SD1459 SD1459 PIN CONNECTION DESCRIPTION The SD1459 is a gold metallized epitaxial silicon NP... See More ⇒
9.3. Size:95K st
sd1456.pdf
SD1456 (TCC3100) RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .CLASS AB PUSH PULL .DESIGNED FOR HIGH POWER LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY .GOLD METALLIZATION .400 x .425 8LFL (M168) .DIFFUSED EMITTER BALLAST epoxy sealed RESISTORS ORDER CODE BRANDING .COMMON EMITTER CONFIGURATION SD1456 TCC3100 .P 100 WMIN. WITH 11.0 dB GAIN = ... See More ⇒
9.4. Size:60K st
sd1455.pdf
SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .170 - 230 MHz .25 VOLTS .IMD - 55dB .COMMON EMITTER .GOLD METALLIZATION .HIGH SATURATED POWER CAPABILITY .DIFFUSED EMITTER BALLAST .500 4L STUD (M130) RESISTORS epoxy sealed .DESIGNED FOR HIGH POWER LINEAR ORDER CODE BRANDING OPERATION SD1455 SD1455 .P 20 W MIN. WITH 8.0 dB GAIN = OUT PIN CONNECTION DESCRIPTION The ... See More ⇒
9.5. Size:121K sanyo
2sb1037 2sd1459.pdf
Ordering number EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC TO-220AB 1 Base ( ) 2SB1037 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25... See More ⇒
9.6. Size:61K panasonic
2sd1457.pdf
Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features High foward current transfer ratio hFE 3.2 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings (TC=25 C)... See More ⇒
9.7. Size:39K panasonic
2sd1450.pdf
Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol... See More ⇒
9.8. Size:44K panasonic
2sd1450 e.pdf
Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol... See More ⇒
9.10. Size:212K inchange semiconductor
2sd1459.pdf
isc Silicon NPN Power Transistor 2SD1459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
9.11. Size:212K inchange semiconductor
2sd1452.pdf
isc Silicon NPN Power Transistor 2SD1452 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
9.12. Size:212K inchange semiconductor
2sd1454.pdf
isc Silicon NPN Power Transistor 2SD1454 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
9.13. Size:222K inchange semiconductor
2sd1457.pdf
isc Silicon NPN Darlington Power Transistor 2SD1457 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 2A, V = 2V FE C CE High Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
9.14. Size:212K inchange semiconductor
2sd1456.pdf
isc Silicon NPN Power Transistor 2SD1456 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
9.15. Size:213K inchange semiconductor
2sd1455.pdf
isc Silicon NPN Power Transistor 2SD1455 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
9.16. Size:214K inchange semiconductor
2sd1453.pdf
isc Silicon NPN Power Transistor 2SD1453 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
9.17. Size:119K inchange semiconductor
2sd1457 2sd1457a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
9.18. Size:188K inchange semiconductor
2sd1451.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1451 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: SD1420, SD1422, SD1429, SD1434, SD1439, SD1446, SD1448, SD1455, BC546, SD1459, SD1460, SD1462, SD1480, SD1487, SD1489, SD1490, SD1536-03
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