SD1459 Datasheet and Replacement

SD1459RF & MICROWAVE TRANSISTORSTV/LINEAR APPLICATIONS.170 - 230 MHz.28 VOLTS.COMMON EMITTER.GOLD METALLIZATION.HIGH SATURATED POWER CAPABILITY.DIFFUSED EMITTER BALLASTRESISTORS.500 Dia .550 4L STUD (M164).P 20 W MIN. WITH 7.5 dB GAINOUT =epoxy sealedORDER CODE BRANDINGSD1459 SD1459PIN CONNECTIONDESCRIPTIONThe SD1459 is a gold metallized epitaxial siliconNP

Ordering number:EN1256C PNP/NPN Planar Silicon Transistors2SB1037/2SD1459Color TV Vertical Output, Sound OutputApplicationsFeatures Package Dimensions High allowable collector dissipation (PC=2W).unit:mm Wide ASO.2010C[2SB1037/2SD1459]JEDEC : TO-220AB 1 : Base( ) : 2SB1037EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25

isc Silicon NPN Power Transistor 2SD1459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1037Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical output, sound outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

SD1457RF & MICROWAVE TRANSISTORSFM BROADCAST APPLICATIONS.108 MHz.28 VOLTS.EFFICIENCY 75%.COMMON EMITTER.GOLD METALLIZATION.P 75 W MIN. WITH 10.0 dB GAIN=OUT.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1457 SD1457PIN CONNECTIONDESCRIPTIONThe SD1457 is a 28 V gold metallized epitaxialsilicon NPN planar transistor designed for FM VHFbroadcast transmitters

SD1458RF & MICROWAVE TRANSISTORSTV\LINEAR APPLICATIONS.170 - 230 MHz.28 VOLTS.IMD -55 dB.COMMON EMITTER.GOLD METALLIZATION.INTERNAL INPUT MATCHING.HIGH SATURATED POWER CAPABILITY.500 6LFL (M111).DESIGNED FOR HIGH POWER LINEARepoxy sealedOPERATIONORDER CODE BRANDING.P 14 W MIN. WITH 14.0 dB GAINOUT =SD1458 SD1458PIN CONNECTIONDESCRIPTIONThe SD1458 is a gol

SD1456 (TCC3100)RF & MICROWAVE TRANSISTORSTV/LINEAR APPLICATIONS.170 - 230 MHz.28 VOLTS.CLASS AB PUSH PULL.DESIGNED FOR HIGH POWER LINEAROPERATION.HIGH SATURATED POWER CAPABILITY.GOLD METALLIZATION.400 x .425 8LFL (M168).DIFFUSED EMITTER BALLASTepoxy sealedRESISTORSORDER CODE BRANDING.COMMON EMITTER CONFIGURATIONSD1456 TCC3100.P 100 WMIN. WITH 11.0 dB GAIN=

SD1455RF & MICROWAVE TRANSISTORSTV/LINEAR APPLICATIONS.170 - 230 MHz.25 VOLTS.IMD - 55dB.COMMON EMITTER.GOLD METALLIZATION.HIGH SATURATED POWER CAPABILITY.DIFFUSED EMITTER BALLAST.500 4L STUD (M130)RESISTORSepoxy sealed.DESIGNED FOR HIGH POWER LINEARORDER CODE BRANDINGOPERATIONSD1455 SD1455.P 20 W MIN. WITH 8.0 dB GAIN=OUTPIN CONNECTIONDESCRIPTIONThe

Transistor2SD1458Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board. 0.850.55 0.1 0.45 0

Transistor2SD1458Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board. 0.850.55 0.1 0.45 0

Power Transistors2SD1457, 2SD1457ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm15.0 0.3 5.0 0.211.0 0.2 3.2FeaturesHigh foward current transfer ratio hFE 3.2 0.1High collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw2.0 0.22.0 0.1Absolute Maximum Ratings (TC=25C)

Transistor2SD1450Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low collector to emitter saturation voltage VCE(sat).markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter vol

Transistor2SD1450Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low collector to emitter saturation voltage VCE(sat).markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter vol

isc Silicon NPN Power Transistor 2SD1452DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1454DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Darlington Power Transistor 2SD1457DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 2A, V = 2VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SD1456DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1455DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1453DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 EmitterAbsolute maximum ratings

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1451DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER