SD1730 Datasheet, Equivalent, Cross Reference Search

SD1730 (TH560)RF POWER BIPOLAR TRANSISTORSHF SSB APPLICATIONSFEATURES SUMMARY Figure 1. Package OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD 30 dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4L FL (M174)epoxy sealedDESCRIPTIONThe SD1730 is a 28 V epitaxial silicon NPN planartransistor designed prima

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CSD17302Q5Awww.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17302Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 5.4 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.2 nC Avalanche RatedVGS

CSD17305Q5Awww.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17305Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 14.1 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 3 nC Avalanche RatedVGS =

CSD17308Q3www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17308Q3PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 0.8 nC Low Thermal ResistanceVGS = 3V 12.5 m

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17309Q3SLPS261B MARCH 2010 REVISED SEPTEMBER 2014CSD17309Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Optimized for 5 V Gate DriveTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Cha

CSD17304Q3www.ti.com SLPS258A FEBRUARY 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17304Q3PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 5.1 nC Ultralow Qg and QgdQgd Gate Charge Gate to Drain 1.1 nC Low Thermal ResistanceVGS = 3V 9.8 m Av

CSD17307Q5Awww.ti.com SLPS252A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17307Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 4 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1 nC Avalanche RatedVGS = 3V

CSD17303Q5www.ti.com SLPS246B JANUARY 2010 REVISED SEPTEMBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17303Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 18 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 4 nC Avalanche RatedVGS = 3V

CSD17301Q5Awww.ti.com SLPS215C JANUARY 2010 REVISED SEPTEMBER 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17301Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 19 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 4.3 nC Avalanche RatedVG

CSD17306Q5Awww.ti.com SLPS253A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17306Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 11.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.4 nC Avalanche RatedVGS

CSD17301Q5www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLUTE M

isc Silicon NPN Power Transistor 2SD1730DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base