SD1730 PDF and Equivalents Search

 ..1. Size:386K  st

 sd1730.pdf

SD1730 (TH560) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY Figure 1. Package OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD 30 dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4L FL (M174) epoxy sealed DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed prima... See More ⇒

 0.1. Size:105K  panasonic

 2sd1730.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 0.2. Size:883K  texas

 csd17302q5a.pdf

CSD17302Q5A www.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17302Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 5.4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.2 nC Avalanche Rated VGS ... See More ⇒

 0.3. Size:884K  texas

 csd17305q5a.pdf

CSD17305Q5A www.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17305Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 14.1 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3 nC Avalanche Rated VGS =... See More ⇒

 0.4. Size:517K  texas

 csd17308q3.pdf

CSD17308Q3 www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17308Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.8 nC Low Thermal Resistance VGS = 3V 12.5 m ... See More ⇒

 0.5. Size:940K  texas

 csd17309q3.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17309Q3 SLPS261B MARCH 2010 REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Optimized for 5 V Gate Drive TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Cha... See More ⇒

 0.6. Size:895K  texas

 csd17304q3.pdf

CSD17304Q3 www.ti.com SLPS258A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17304Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 5.1 nC Ultralow Qg and Qgd Qgd Gate Charge Gate to Drain 1.1 nC Low Thermal Resistance VGS = 3V 9.8 m Av... See More ⇒

 0.7. Size:881K  texas

 csd17307q5a.pdf

CSD17307Q5A www.ti.com SLPS252A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17307Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1 nC Avalanche Rated VGS = 3V... See More ⇒

 0.8. Size:894K  texas

 csd17303q5.pdf

CSD17303Q5 www.ti.com SLPS246B JANUARY 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17303Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4 nC Avalanche Rated VGS = 3V... See More ⇒

 0.9. Size:885K  texas

 csd17301q5a.pdf

CSD17301Q5A www.ti.com SLPS215C JANUARY 2010 REVISED SEPTEMBER 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17301Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 19 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4.3 nC Avalanche Rated VG... See More ⇒

 0.10. Size:883K  texas

 csd17306q5a.pdf

CSD17306Q5A www.ti.com SLPS253A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17306Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 11.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.4 nC Avalanche Rated VGS... See More ⇒

 0.11. Size:1796K  cn vbsemi

 csd17301q5.pdf

CSD17301Q5 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLUTE M... See More ⇒

 0.12. Size:215K  inchange semiconductor

 2sd1730.pdf

isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base ... See More ⇒