All Transistors. MPSA29RLRPG Datasheet

 

MPSA29RLRPG Datasheet, Equivalent, Cross Reference Search

Type Designator: MPSA29RLRPG

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO92

MPSA29RLRPG Transistor Equivalent Substitute - Cross-Reference Search

 

MPSA29RLRPG Datasheet (PDF)

1.1. mpsa29rlrpg.pdf Size:141K _update

MPSA29RLRPG
MPSA29RLRPG

MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb--Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector--Emitter Voltage MPSA28 VCES 80 Vdc MPSA29 100 Collector--Base Voltage MPSA28 VCBO 80 Vdc EMITTER 1 MPSA29 100 Emitter--Base Voltage VEBO 12 Vdc Collector Current --

4.1. mpsa29g.pdf Size:141K _update

MPSA29RLRPG
MPSA29RLRPG

MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb--Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector--Emitter Voltage MPSA28 VCES 80 Vdc MPSA29 100 Collector--Base Voltage MPSA28 VCBO 80 Vdc EMITTER 1 MPSA29 100 Emitter--Base Voltage VEBO 12 Vdc Collector Current --

4.2. mpsa28 mpsa29.pdf Size:130K _motorola

MPSA29RLRPG
MPSA29RLRPG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA28/D Darlington Transistors MPSA28 NPN Silicon * MPSA29 COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit 1 2 CollectorEmitter Voltage VCES 80 100 Vdc 3 CollectorBase Voltage VCBO 80 100 Vdc CASE 2904, STYLE 1 EmitterBase Voltage VEBO 12 Vdc TO92 (TO22

 4.3. mpsa29.pdf Size:293K _fairchild_semi

MPSA29RLRPG
MPSA29RLRPG

Discrete POWER & Signal Technologies MPSA29 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 100 V V Collector

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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