MRF10150 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF10150
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 700 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1150 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: 376B-02
MRF10150 Transistor Equivalent Substitute - Cross-Reference Search
MRF10150 Datasheet (PDF)
mrf10150.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10150/DThe RF LineMicrowave PulseMRF10150Power Transistor. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 150 Watts Peak150 W (PEAK)Gain = 9.5 dB Min, 10.0 dB (Typ)10251150 MHzMIC
mrf10150.pdf
MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa
mrf1015m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum
mrf1015ma mrf1015mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum
mrf1015mb.pdf
HG RF POWER TRANSISTORMRF1015MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1
mrf1015ma.pdf
MRF1015MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 960 1215 MHzMinimum Gain = 10 dBMICROWAVE POWER 100% Tested for Load Mismatch at All
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
