MRF410 Datasheet and Replacement
Type Designator: MRF410
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT120
MRF410 Datasheet (PDF)
mrf410.pdf

ELEFLOW TECHNOLOGIES MRF410www.eleflow.com NPN Bipolar RF power transistor MRF410 Description: MRF410 is designed primarily for HF, VHF, UHF, 800MHz, and Microwave applications in military and commercial land mobile, avionics, and marine transmitters. Features: 1.5-30MHz, HF/SSB Transistors. Designed for broadband operation, these devices feature specified intermodulation dist
mrf412.pdf

ELEFLOW TECHNOLOGIES MRF412www.eleflow.com NPN Silicon RF power transistor MRF412 Description: MRF412 is designed primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment where superior ruggedness is required. Features: Specified 13.6V, 30MHz characteristics: Pout: 70W PEP or CW, Min Gpe: 13dB, Effici
Datasheet: MRF261 , MRF2628 , MRF264 , MRF314A , MRF315A , MRF329 , MRF392 , MRF393 , D667 , MRF412 , MRF427A , MRF429 , MRF448 , MRF449A , MRF450A , MRF453A , MRF466 .
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History: 3CG1020 | 2SD1029



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