MRF410 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF410
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT120
MRF410 Transistor Equivalent Substitute - Cross-Reference Search
MRF410 Datasheet (PDF)
mrf410.pdf
ELEFLOW TECHNOLOGIES MRF410www.eleflow.com NPN Bipolar RF power transistor MRF410 Description: MRF410 is designed primarily for HF, VHF, UHF, 800MHz, and Microwave applications in military and commercial land mobile, avionics, and marine transmitters. Features: 1.5-30MHz, HF/SSB Transistors. Designed for broadband operation, these devices feature specified intermodulation dist
mrf412.pdf
ELEFLOW TECHNOLOGIES MRF412www.eleflow.com NPN Silicon RF power transistor MRF412 Description: MRF412 is designed primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment where superior ruggedness is required. Features: Specified 13.6V, 30MHz characteristics: Pout: 70W PEP or CW, Min Gpe: 13dB, Effici
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
