MRF492 Datasheet and Replacement
Type Designator: MRF492
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 275 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: SOT121
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MRF492 Datasheet (PDF)
mrf492.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI
mrf492.pdf
HG RF POWER TRANSISTORMRF492SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 WMinimum Gain = 11 dBEfficiency = 50% Load Mismatch Capability at High Line and RF OverdriveMAX
mrf492re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BD536J | MUN2135T1G | BD354 | NTE244 | 2SB1064 | BD501 | CMST5087
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History: BD536J | MUN2135T1G | BD354 | NTE244 | 2SB1064 | BD501 | CMST5087
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