MRF492 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MRF492 Datasheet. Specs and Replacement

Type Designator: MRF492 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 275 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT121

MRF492 Substitution

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MRF492 datasheet

..1. Size:84K motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF492/D The RF Line NPN Silicon MRF492 RF Power Transistor Designed for 12.5 volt low band VHF large signal power amplifier applica- tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W 70 W, 50 MHz Minimum Gain = 11 dB RF POWER Efficiency = 50% TRANSI... See More ⇒

..2. Size:220K hgsemi

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HG RF POWER TRANSISTOR MRF492 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 volt low band VHF large signal power amplifier applica- tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W Minimum Gain = 11 dB Efficiency = 50% Load Mismatch Capability at High Line and RF Overdrive MAX... See More ⇒

0.1. Size:84K motorola

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