All Transistors. MRF654 Datasheet

 

MRF654 Datasheet, Equivalent, Cross Reference Search

Type Designator: MRF654

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 44 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 512 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT122

MRF654 Transistor Equivalent Substitute - Cross-Reference Search

 

MRF654 Datasheet (PDF)

1.1. mrf654.pdf Size:234K _update

MRF654

HG RF POWER TRANSISTOR MRF654 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. ω Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55% ω Built–In Matching Network for Broadband Operat

1.2. mrf654re.pdf Size:105K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF654/D The RF Line NPN Silicon MRF654 RF Power Transistor . . . designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W 15 W, 470 MHz Minimum Gain = 7.8 dB RF POWER Efficiency = 55% T

5.1. mrf652s.pdf Size:243K _update

MRF654

HG RF POWER TRANSISTOR MRF652S Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. ω Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) ω Typical Performance at 512 MHz, 12.5 V, 5.

5.2. mrf652.pdf Size:241K _update

MRF654

HG RF POWER TRANSISTOR MRF652 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. ω Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) ω Typical Performance at 512 MHz, 12.5 V, 5.0

5.3. mrf658.pdf Size:255K _update

MRF654

HG RF POWER TRANSISTOR MRF658 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. ω Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50% ω Characterized

5.4. mrf653.pdf Size:250K _update

MRF654

HG RF POWER TRANSISTOR MRF653 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. ω Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65% (Typ) ω Gold Metallized, Emitter Ballasted for Long Life a

5.5. mrf650.pdf Size:269K _update

MRF654

HG RF POWER TRANSISTOR MRF650 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. ω Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB

5.6. mrf658rev7.pdf Size:93K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF largesignal, common emitter, classC amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 MHz Minim

5.7. mrf650rev8.pdf Size:154K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz RF POW

5.8. mrf653rev8.pdf Size:163K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Typ) TRA

5.9. mrf658re.pdf Size:127K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF largesignal, common emitter, classC amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 MHz Minim

5.10. mrf652re.pdf Size:111K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF652/D The RF Line NPN Silicon MRF652 RF Power Transistors MRF652S Designed for 12.5 Vdc UHF largesignal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts 5.0 W, 512 MHz Minimum Gain = 10 dB RF POWER Efficienc

5.11. mrf653re.pdf Size:123K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65%

5.12. mrf650re.pdf Size:146K _motorola

MRF654
MRF654

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz RF POW

Datasheet: MRF581 , MRF581A , MRF587 , MRF630 , MRF650 , MRF652 , MRF652S , MRF653 , BC337 , MRF658 , MRF839 , MRF839F , MRF857S , MRF891 , MRF891S , MRF894 , MRF897 .

 


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