MRF897 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MRF897 Datasheet. Specs and Replacement

Type Designator: MRF897 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 105 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: KT81

MRF897 Substitution

- BJT ⓘ Cross-Reference Search

MRF897 datasheet

..1. Size:151K motorola

mrf897.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF897/D The RF Line NPN Silicon MRF897 RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 970 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 Wat... See More ⇒

..2. Size:97K njs

mrf897.pdf pdf_icon

... See More ⇒

0.1. Size:172K motorola

mrf897rr.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF897R/D The RF Line NPN Silicon MRF897R RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 970 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 W... See More ⇒

0.2. Size:151K motorola

mrf897re.pdf pdf_icon