MS2204 Datasheet. Specs and Replacement

Type Designator: MS2204  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1150 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: M115

 MS2204 Substitution

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MS2204 datasheet

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MS2204

HG RF POWER TRANSISTOR MS2204 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS2204 is a common emitter, silicon NPN, microwave transistor... See More ⇒

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MS2204

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MS2204

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 MS2202 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features Features 1025 - 1150 MHz 35 VOLTS INPUT MATCHING POUT = 2.0 WATTS GP = 9.0 dB MINIMUM LOW THERMAL RESISTANCE COMMON BASE CONFIGURATION DESCRIPTION DESCRIPTION The MS2202 is ... See More ⇒

Detailed specifications: MS1226, MS1227, MS1261, MS1329, MS1501, MS1649, MS2202, MS2203, 2N2222A, MS8050-H, MS8050-L, MSA1162GT1G, MSB1218A-RT1, MSB1218A-RT1G, MSB92ASWT1G, MSB92AWT1G, MSB92T1G

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