MSD42WT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MSD42WT1G
SMD Transistor Code: 1D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT323
MSD42WT1G Transistor Equivalent Substitute - Cross-Reference Search
MSD42WT1G Datasheet (PDF)
msd42wt1g nsvmsd42wt1g.pdf
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MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
msd42wt1g.pdf
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MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
nsvmsd42wt1g.pdf
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MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
msd42wt1rev1.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD42WT1/DPreliminary InformationMSD42WT1NPN Silicon General PurposeMotorola Preferred DevicesHigh Voltage TransistorThis NPN Silicon Planar Transistor is designed for general purpose amplifierNPN GENERAL PURPOSEapplications. This device is housed in the SC-70/SOT-323 packageHIGH VOLTAGE which is designed for lo
msd42wt1-t.pdf
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MSD42WT1G, MSD42T1GNPN Silicon GeneralPurpose High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323http://onsemi.comand SC-59 packages which are designed for low power surfacemount applications. COLLECTOR3Features These Devices are Pb-Free, Halogen Free/BFR Free and are
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .