MSD42WT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MSD42WT1G
SMD Transistor Code: 1D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT323
MSD42WT1G Transistor Equivalent Substitute - Cross-Reference Search
MSD42WT1G Datasheet (PDF)
msd42wt1g nsvmsd42wt1g.pdf
MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
msd42wt1g.pdf
MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
nsvmsd42wt1g.pdf
MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
msd42wt1rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD42WT1/DPreliminary InformationMSD42WT1NPN Silicon General PurposeMotorola Preferred DevicesHigh Voltage TransistorThis NPN Silicon Planar Transistor is designed for general purpose amplifierNPN GENERAL PURPOSEapplications. This device is housed in the SC-70/SOT-323 packageHIGH VOLTAGE which is designed for lo
msd42wt1-t.pdf
MSD42WT1G, MSD42T1GNPN Silicon GeneralPurpose High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323http://onsemi.comand SC-59 packages which are designed for low power surfacemount applications. COLLECTOR3Features These Devices are Pb-Free, Halogen Free/BFR Free and are
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
