All Transistors. MSG43003 Datasheet

 

MSG43003 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MSG43003
   SMD Transistor Code: 5X
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 9 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 19000 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: ML3N2

 MSG43003 Transistor Equivalent Substitute - Cross-Reference Search

   

MSG43003 Datasheet (PDF)

 ..1. Size:531K  panasonic
msg43003.pdf

MSG43003
MSG43003

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG43003SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cutoff frequency3 2 Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for 1Ultraminiature package 0.6 mm 1.0 mm (hei

 7.1. Size:202K  panasonic
msg43002.pdf

MSG43003
MSG43003

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43002SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

 7.2. Size:204K  panasonic
msg43004.pdf

MSG43003
MSG43003

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43004SiGe HBT typeFor low-noise RF amplifierUnit: mm3 2 Features Compatible between high breakdown voltage and high cut-off frequency1 Low noise, high-gain amplification0.39+0.011.000.05 -0.03 Optimal size reduction and high level integration for ultra-small packages0.250.05 0

 7.3. Size:205K  panasonic
msg43001.pdf

MSG43003
MSG43003

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG43001SiGe HBT typeFor low-noise RF amplifierUnit: mm Features3 2 Compatible between high breakdown voltage and high cutoff fre-quency10.39+0.01 Low-noise, high-gain amplification 1.000.05 -0.03 Suitable for high-density mounting and downsizing of the equip-0.250.05 0.250.05

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: 2SC2712-O | MSG43002 | MRF9511ALT1 | 2SD2108

 

 
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