All Transistors. MT3S111TU Datasheet

 

MT3S111TU Datasheet and Replacement


   Type Designator: MT3S111TU
   SMD Transistor Code: R5
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 0.6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10000 MHz
   Collector Capacitance (Cc): 1.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT323F

 MT3S111TU Transistor Equivalent Substitute - Cross-Reference Search

   

MT3S111TU Datasheet (PDF)

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MT3S111TU

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA - Ab... See More ⇒

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MT3S111TU

MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA -... See More ⇒

 7.1. Size:161K  toshiba
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MT3S111TU

MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T... See More ⇒

 7.2. Size:161K  toshiba
 mt3s111p.pdf pdf_icon

MT3S111TU

MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.... See More ⇒

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Datasheet: MSG43002 , MSG43003 , MSG43004 , MSG430C4 , MSG430D4 , MT3S106FS , MT3S111 , MT3S111P , S9013 , MT3S113 , MT3S113P , MT3S113TU , MT4S102T , MT4S102U , MT4S300U , MT4S301U , MT6L03AE .

History: CD0014N | L9012SLT3G | RN2902AFS | KTC3199-Y | RN2972HFE | CD9011D | BFQ88B

Keywords - MT3S111TU transistor datasheet

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