MP4021 Datasheet, Equivalent, Cross Reference Search
Type Designator: MP4021
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 85 V
Maximum Collector-Emitter Voltage |Vce|: 85 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: 2-25A1A
MP4021 Transistor Equivalent Substitute - Cross-Reference Search
MP4021 Datasheet (PDF)
mp4021.pdf
MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4021 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
mp4021 .pdf
MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
mp4020.pdf
MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4020 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
mp4024.pdf
MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4024 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) Built-in resistance (R ). B Surge voltage is clamped by zener diode (C-B).
mp4025 .pdf
MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).
mp4025.pdf
MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low
mp4024 .pdf
MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistors in One) MP4024 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).
mp4020 .pdf
MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
dmp4025lsd.pdf
A Product Line ofDiodes IncorporatedDMP4025LSD40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max (A) Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses 25m @ VGS = -10V -7.6 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 45m @
dmp4025sfg.pdf
A Product Line ofDiodes IncorporatedDMP4025SFG40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses (Notes 6) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 25m @ VGS = -10V - 7.2A -40V Hal
dmp4025lss.pdf
A Product Line ofDiodes IncorporatedDMP4025LSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(on) Minimizes conduction losses ID max (A) Fast switching speed Minimizes switching losses V(BR)DSS RDS(on) max TA = 25C Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) (Notes 6) Halogen and Antimony Free. Gr
dmp4025lk3.pdf
DMP4025LK340V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max BVDSS RDS(on) max TA = +25C Fast Switching Speed (Note 6) Low Input/Output Leakage 25m @ VGS = -10V -8.6A Lead-Free Finish; RoHS compliant (Note 1 & 2) -40V 45m @ VGS = -4.5V -7.0A Halogen and Antimony Free. Green Device (Note 3) Quali
dmp4025lsd.pdf
DMP4025LSDwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18
dmp4025lk3.pdf
isc P-Channel MOSFET Transistor DMP4025LK3FEATURESDrain Current I = -8.6A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
