MP4513 Datasheet and Replacement
Type Designator: MP4513
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: 2-32B1A
MP4513 Substitution
MP4513 Datasheet (PDF)
mp4513.pdf

MP4513 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4513 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta =
mp4514.pdf

MP4514 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4514 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta = 25C
Datasheet: MP4303 , MP4304 , MP4305 , MP4502 , MP4503 , MP4506 , MP4507 , MP4508 , 2SC5200 , MP4514 , MP4T243 , MP4T3243 , MP4T6310 , MP4T6325 , MP4T6365 , MP4T645 , MP4T801 .
History: LMBT5550LT3G
Keywords - MP4513 transistor datasheet
MP4513 cross reference
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History: LMBT5550LT3G



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