MP4T801 Datasheet. Specs and Replacement
Type Designator: MP4T801 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 6000 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: DIE
MP4T801 Substitution
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MP4T801 datasheet
M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80100 Features Die Outline MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT (6GHz) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when operated in a class C environment. The typical applied voltage is fro... See More ⇒
M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80200 Features Die Outline MP4T80200 High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) E m itte r B o n d Base Bond Pa d Pad Description B a lla s t R esistors A ctiv e D evice The MP4T80200 series of our medium power high gain npn A reas ( 4) transistor has a power output of 1.0... See More ⇒
Moderate Power High f T NPN Silicon Transistor MP4T856 Series Features Package Outline High Output Power SOT-23 - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz High Gain Bandwidth Product 8-9 GHz fT High Power Gain - S21E 2 = 15 dB @ 1 GHz - S21E 2 = 9 dB @ 2 GHz Low Noise Figure - 1.5 dB @ 1.5 GHz Description SOT-143 The MP4T856 series of moderate power NPN trans... See More ⇒
Detailed specifications: MP4513, MP4514, MP4T243, MP4T3243, MP4T6310, MP4T6325, MP4T6365, MP4T645, C945, MP4T802, MP4T856, MP6301, MP6901, MPQ3467, MPQ3725, MPQ3725A, MPQ3762
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