MP4T856 Datasheet, Equivalent, Cross Reference Search
Type Designator: MP4T856
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7000 MHz
Collector Capacitance (Cc): 0.62 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT-23 SOT-143
MP4T856 Transistor Equivalent Substitute - Cross-Reference Search
MP4T856 Datasheet (PDF)
mp4t856.pdf
Moderate Power High fTNPN Silicon Transistor MP4T856 SeriesFeatures Package OutlineHigh Output PowerSOT-23- 16 dBm P1dB @ 1 GHz- 10 dBm P1dB @ 2 GHzHigh Gain Bandwidth Product8-9 GHz fTHigh Power Gain- |S21E|2 = 15 dB @ 1 GHz- |S21E|2 = 9 dB @ 2 GHzLow Noise Figure- 1.5 dB @ 1.5 GHzDescriptionSOT-143The MP4T856 series of moderate power NPNtrans
mp4t801.pdf
M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80100 Features Die Outline MP4T80100 High Performance at VCE = 8V .5 watts Class C at 900 MHz High fT (6GHz) Description The MP4T80100 series of our medium power high gain npn transistor has a power output of .5 watts at 900 MHz when operated in a class C environment. The typical applied voltage is fro
mp4t802.pdf
M-Pulse Microwave 8 Volt, NPN Transistor Medium Power MP4T80200 Features Die Outline MP4T80200 High Performance at VCE = 8V 1.0 watts Class C at 900 MHz High fT (6GHz) E m itte r B o n dBase Bond Pa d PadDescription B a lla s tR esistors A ctiv e D eviceThe MP4T80200 series of our medium power high gain npn A reas ( 4)transistor has a power output of 1.0
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N3678
