All Transistors. BD435G Datasheet

 

BD435G Datasheet, Equivalent, Cross Reference Search

Type Designator: BD435G

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 32 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO225

BD435G Transistor Equivalent Substitute - Cross-Reference Search

 

BD435G Datasheet (PDF)

1.1. bd435g.pdf Size:60K _update

BD435G
BD435G

BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http://onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS • Pb-Free Packages are Available* NPN SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATI

5.1. bd433 bd434 bd435 bd436 bd437 bd438.pdf Size:51K _st

BD435G
BD435G

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car-rad

5.2. bd433 bd435 bd437 bd434 bd436 bd438.pdf Size:70K _st

BD435G
BD435G

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output sta

5.3. bd433 bd435 bd437.pdf Size:44K _fairchild_semi

BD435G
BD435G

BD433/435/437 Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD433 22 V : BD435 32 V : BD437 45 V VCES Collector-Emitter Voltage : BD433 22 V

5.4. bd433 bd435 bd437.pdf Size:57K _samsung

BD435G
BD435G

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD433 VCBO 22 V : BD435 32 V : BD437 45 V Collector Emitter Voltage : BD433 VCES 22 V : BD435 32 V 1. Emitter 2.Collector 3.Base : BD437 45 V Coll

5.5. bd435 bd437 bd439 bd441.pdf Size:59K _onsemi

BD435G
BD435G

BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http://onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS Pb-Free Packages are Available* NPN SILICON IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIII

5.6. bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf Size:130K _cdil

BD435G
BD435G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 NPN PNP E C TO126 B Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNIT BD434 BD436 BD

5.7. hbd435.pdf Size:144K _shantou-huashan

BD435G
BD435G

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD435 █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation

5.8. hsbd435.pdf Size:119K _shantou-huashan

BD435G

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD435 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…

Datasheet: BD179G , BD180G , BD241CG , BD242BG , BD242CG , BD243CG , BD244BG , BD244CG , 2SC1815 , BD436G , BD437G , BD437TG , BD438G , BD439G , BD440G , BD441G , BD442G .

 


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